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| PD - 95126 IRL3502SPBF HEXFET(R) Power MOSFET Advanced Process Technology Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free Description l l D VDSS = 20V RDS(on) = 0.007 G S ID = 110A These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D 2 Pak Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 110 67 420 140 1.1 10 14 390 64 14 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. 0.89 40 Units C/W 3/18/04 IRL3502SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 0.70 77 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1.0mA 0.008 VGS = 4.5V, ID = 64A 0.007 VGS = 7.0V, ID = 64A V VDS = VGS , ID = 250A S VDS = 10V, ID = 64A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, V GS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 110 ID = 64A 27 nC VDS = 16V 39 VGS = 4.5V, See Fig. 6 VDD = 10V ID = 64A ns RG = 3.8, VGS = 4.5V RD = 0.15, Between lead, nH 7.5 and center of die contact 4700 VGS = 0V 1900 pF VDS = 15V 640 = 1.0MHz, See Fig. 5 Typ. 0.019 10 140 96 130 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 110 showing the A G integral reverse 420 S p-n junction diode. 1.3 V TJ = 25C, IS = 64A, VGS = 0V 87 130 ns TJ = 25C, IF = 64A 200 310 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 190H R G = 25, IAS = 64A. ISD 64A, di/dt 86A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Uses IRL3502 data and test conditions Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. IRL3502SPBF 1000 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 100 2.25V 2.25V 10 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 C TJ = 150 C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 110A I D , Drain-to-Source Current (A) 1.5 100 1.0 0.5 10 V DS = 15V 20s PULSE WIDTH 2 3 4 5 6 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL3502SPBF 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 64A VDS = 16V C, Capacitance (pF) 6000 12 Ciss 4000 9 Coss 2000 6 Crss 0 3 1 10 100 0 0 40 80 120 160 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 100 TJ = 150 C I D , Drain Current (A) 100 100us TJ = 25 C 1ms 10 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 10 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL3502SPBF 120 800 LIMITED BY PACKAGE 100 EAS , Single Pulse Avalanche Energy (mJ) TOP 600 BOTTOM ID 29A 40A 64A ID , Drain Current (A) 80 60 400 40 200 20 0 25 50 TC , Case Temperature ( C) 75 100 125 150 0 25 Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL3502SPBF RDS (on) Drain-to-Source On Resistance ( ) RDS (on) Drain-to-Source On Resistance ( ) 0.014 0.010 0.012 0.008 0.010 0.008 I D = 64A 0.006 VGS = 4.5V 0.006 VGS = 7.0V 0.004 0 100 200 300 400 A 0.004 2.0 3.0 4.0 5.0 6.0 7.0 8.0 A I D , Drain Current (A) V GS , Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage IRL3502SPBF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R F 5 30 S D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L OG O AS S E M B L Y L OT CO D E P AR T N U M B E R F 530 S D AT E C O D E P = D E S IGN AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 WE E K 02 A = AS S E M B L Y S IT E C O D E IRL3502SPBF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/04 |
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